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DS2030Y/AB Single-Piece 256kb
Nonvolatile SRAM
AC ELECTRICAL CHARACTERISTICS (continued)
(V CC = 5V ±5% for DS2030AB, V CC = 5V ±10% for DS2030Y, T A = -40 ° C to +85 ° C.)
DS2030AB-70
DS2030AB-100
PARAMETER
CE to Output Valid
OE or CE to Output Active
Output High Impedance from
Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Impedance from WE
Output Active from WE
Data Setup Time
Data Hold Time
SYMBOL
t CO
t COE
t OD
t OH
t WC
t WP
t AW
t WR1
t WR2
t ODW
t OEW
t DS
t DH1
t DH2
CONDITIONS
(Note 2)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 2)
(Note 2)
(Note 6)
(Note 4)
(Note 5)
DS2030Y-70
MIN
MAX
70
5
25
5
70
55
0
5
15
25
5
30
0
10
DS2030Y-100
MIN
MAX
100
5
35
5
100
75
0
5
15
35
5
40
0
10
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN/POWER-UP TIMING
(T A = -40 ° C to +85 ° C)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
CONDITIONS
(Note 7)
MIN
TYP
MAX
1.5
UNITS
μs
V CC Slew from V TP to 0V
V CC Slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t F
t R
t PU
t REC
150
150
2
125
μs
μs
ms
ms
V CC Fail Detect to RST Active
t RPD
(Note 1)
3.0
μs
V CC Valid to RST Inactive
t RPU
(Note 1)
225
350
525
ms
DATA RETENTION
(T A = +25 ° C)
PARAMETER
Expected Data-Retention Time (Per Charge)
SYMBOL
t DR
CONDITIONS
(Note 8)
MIN
2
TYP
3
MAX
UNITS
years
AC TEST CONDITIONS
Input Pulse Levels:
Input Pulse Rise and Fall Times:
Input and Output Timing Reference Level:
Output Load:
V IL = 0.0V, V IH = 3.0V
5ns
1.5V
1 TTL Gate + C L (100pF) including scope and jig
_____________________________________________________________________
3
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